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MCP14E3/MCP14E4/MCP14E5
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications: Unless otherwise indicated, operating temperature range with 4.5V ≤ V DD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘ 1 ’, High Input Voltage
Logic ‘ 0 ’, Low Input Voltage
V IH
V IL
2.4
—
—
—
—
0.8
V
V
Input Current
I IN
–10
—
+10
μA
0V ≤ V IN ≤ V DD
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
V OH
V OL
R OH
R OL
V DD – 0.025
—
—
—
—
—
3.0
3.0
—
0.025
6.0
5.0
V
V
Ω
Ω
DC TEST
DC TEST
I OUT = 10 mA, V DD = 18V
I OUT = 10 mA, V DD = 18V
Switching Time (Note 1)
Rise Time
t R
—
25
40
ns
Figure 4-1 , Figure 4-2
C L = 2200 pF
Fall Time
t F
—
28
40
ns
Figure 4-1 , Figure 4-2
C L = 2200 pF
Delay Time
Delay Time
t D1
t D2
—
—
50
50
70
70
ns
ns
Figure 4-1 , Figure 4-2
Figure 4-1 , Figure 4-2
Enable Function (ENB_A, ENB_B)
High-Level Input Voltage
Low-Level Input Voltage
Hysteresis
Enable Leakage Current
Propagation Delay Time
Propagation Delay Time
V EN_H
V EN_L
V HYST
I ENBL
t D3
t D4
1.60
1.30
—
40
—
—
2.20
1.80
0.40
87
50
60
2.90
2.40
—
115
—
—
V
V
V
μA
ns
ns
V DD = 12V, LO to HI Transition
V DD = 12V, HI to LO Transition
V DD = 12V, ENB_A = ENB_B = GND
Figure 4-3
Figure 4-3
Power Supply
Supply Voltage
V DD
4.5
—
18.0
V
Supply Current
I DD
—
2.0
3.0
mA
V IN_A = 3V, V IN_B = 3V,
ENB_A = ENB_B = High
I DD
—
0.8
1.1
mA
V IN_A = 0V, V IN_B = 0V,
ENB_A = ENB_B = High
I DD
—
1.5
2.0
mA
V IN_A = 3V, V IN_B = 0V,
ENB_A = ENB_B = High
I DD
—
1.5
2.0
mA
V IN_A = 0V, V IN_B = 3V,
ENB_A = ENB_B = High
I DD
—
1.8
2.8
mA
V IN_A = 3V, V IN_B = 3V,
ENB_A = ENB_B = Low
I DD
—
0.6
0.8
mA
V IN_A = 0V, V IN_B = 0V,
ENB_A = ENB_B = Low
I DD
—
1.1
1.8
mA
V IN_A = 3V, V IN_B = 0V,
ENB_A = ENB_B = Low
I DD
—
1.1
1.8
mA
V IN_A = 0V, V IN_B = 3V,
ENB_A = ENB_B = Low
Note 1:
Switching times ensured by design.
? 2008 Microchip Technology Inc.
DS22062B-page 5
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